The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Mar. 18, 2016
Canon Kabushiki Kaisha, Tokyo, JP;
Katsunori Hirota, Yamato, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A photoelectric conversion apparatus includes a charge accumulation region of a first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, and an element isolation. The first semiconductor region is arranged so as to extend downward from a portion between the charge accumulation region and the element isolation, and the second semiconductor region includes a portion arranged below the charge accumulation region, and impurity concentration distributions of the charge accumulation region, the first semiconductor region and the second semiconductor region in a depth direction respectively have peaks at depth Rp1, Rp2, and Rp3, and Rp1<Rp2<Rp3 is satisfied. Impurity concentration C1 of the first semiconductor region at Rp2 is higher than impurity concentration C2 of the second semiconductor region at Rp3.