The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Apr. 08, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/4763 (2006.01); H01L 27/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 29/66628 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes a substrate, a gate electrode on the substrate, an insulating layer on the gate electrode, first and second lower vias in the insulating layer, first and second lower metal lines provided on the insulating layer and respectively connected to the first and second lower vias, and first and second upper metal lines provided on and respectively connected to the first and second lower metal lines. When viewed in a plan view, the first lower via is overlapped with the second upper metal line, and the second lower via is overlapped with the first upper metal line.