The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Oct. 02, 2015
Applicant:

Hitachi Metals, Ltd., Minato-ku, Tokyo, JP;

Inventors:

Yutaka Uematsu, Tokyo, JP;

Hiroyuki Nagatomo, Tokyo, JP;

Junichi Masukawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/498 (2006.01); H01L 23/50 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5385 (2013.01); H01L 23/49811 (2013.01); H01L 23/49816 (2013.01); H01L 23/50 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01);
Abstract

Provided is a circuit substrate for a semiconductor package used for mounting a plurality of semiconductor devices. The circuit substrate including: a first circuit substrate unit; and a second circuit substrate unit that is formed on the first circuit substrate unit, wherein Young's modulus of a first dielectric material composing the dielectric layer of the first circuit substrate unit is higher than Young's modulus of a second dielectric material composing the dielectric layer of the second circuit substrate unit, and a coefficient of thermal expansion of the first dielectric material composing the dielectric layer of the first circuit substrate unit is smaller than a coefficient of thermal expansion of the second dielectric material composing the dielectric layer of the second circuit substrate unit.


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