The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Mar. 10, 2016
Applicant:
Mie Fujitsu Semiconductor Limited, Kuwana-shi, Mie, JP;
Inventors:
Assignee:
MIE FUJITSU SEMICONDUCTOR LIMITED, Kuwana-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 31/113 (2006.01); H01L 27/01 (2006.01); H01L 23/528 (2006.01); H01L 27/11573 (2017.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 27/11573 (2013.01); H01L 29/42348 (2013.01); H01L 29/792 (2013.01);
Abstract
There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region.