The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Aug. 04, 2015
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventor:
Walter Rieger, Arnoldstein, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/82345 (2013.01); H01L 21/823462 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/42364 (2013.01); H01L 29/66545 (2013.01); H01L 29/7827 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, at least a first field-effect structure integrated in the semiconductor substrate and at least a second field-effect structure integrated in the semiconductor substrate. The first field-effect structure includes a first gate electrode comprised of a polycrystalline semiconductor material. The second field-effect structure includes a second gate electrode comprised of one of a metal, a metal alloy, a metal layer stack, a metal alloy layer stack and any combination thereof.