The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Nov. 17, 2014
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventor:

Stephen M. Sirard, Austin, TX (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01J 37/32 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32926 (2013.01); H01J 37/32082 (2013.01); H01L 21/0337 (2013.01); H01L 21/31138 (2013.01);
Abstract

Provided herein are methods of selectively etching silicon-containing block copolymer (BCP) materials. The methods involve exposing a BCP material that includes at least one silicon-containing block and at least one non-silicon-containing block to a plasma that has a reducing chemistry. The reducing plasma selectively removes the non-silicon-containing block, the silicon-containing block to be used in further processing. In some embodiments, the silicon-containing block is used as an etch mask. The reducing plasma reduces or eliminates profile bowing and undercut of the silicon-containing domains, allowing processing of high aspect ratio features. Examples of reducing chemistries include nitrogen (N), hydrogen (H), ammonia (NH), hydrazine (NH), and mixtures thereof. Also provided are apparatuses to perform the methods.


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