The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Apr. 16, 2012
Applicants:

Giselher Herzer, Bruchkoebel, DE;

Christian Polak, Blankenbach, DE;

Viktoria Budinsky, Freigericht, DE;

Inventors:

Giselher Herzer, Bruchkoebel, DE;

Christian Polak, Blankenbach, DE;

Viktoria Budinsky, Freigericht, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 27/25 (2006.01); H01F 1/147 (2006.01); H01F 41/02 (2006.01); C21D 8/12 (2006.01); C21D 6/00 (2006.01); C22C 38/02 (2006.01); C22C 38/12 (2006.01); C22C 38/16 (2006.01); C22C 38/00 (2006.01); C22C 45/02 (2006.01); H01F 1/153 (2006.01); C21D 9/56 (2006.01);
U.S. Cl.
CPC ...
H01F 1/14766 (2013.01); C21D 8/1272 (2013.01); C21D 9/56 (2013.01); C22C 38/00 (2013.01); C22C 38/02 (2013.01); C22C 38/12 (2013.01); C22C 38/16 (2013.01); C22C 45/02 (2013.01); H01F 1/14708 (2013.01); H01F 1/15308 (2013.01); H01F 1/15333 (2013.01); H01F 41/0226 (2013.01); C21D 2201/03 (2013.01); Y10T 428/12431 (2015.01);
Abstract

An alloy is provided which consists of FeCuNbMTSiBZand up to 1 at % impurities, M being one or more of the elements Mo, Ta and Zr, T being one or more of the elements V, Mn, Cr, Co and Ni, Z being one or more of the elements C, P and Ge, 0 at %≦a<1.5 at %, 0 at %≦b<2 at %, 0 at %≦(b+c)<2 at %, 0 at %≦d<5 at %, 10 at %<x<18 at %, 5 at %<y<11 at % and 0 at %≦z<2 at %. The alloy is configured in tape form and has a nanocrystalline structure in which at least 50 vol % of the grains have an average size of less than 100 nm, a hysteresis loop with a central linear region, a remanence ratio Jr/Js of <0.1 and a coercive field strength Hto anisotropic field strength Hratio of <10%.


Find Patent Forward Citations

Loading…