The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Sep. 30, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kenji Hirohata, Tokyo, JP;

Minoru Mukai, Tokyo, JP;

Tomoko Monda, Kanagawa-ken, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); H01L 23/31 (2006.01); G01R 27/16 (2006.01); H01L 23/64 (2006.01);
U.S. Cl.
CPC ...
G01R 27/16 (2013.01); H01L 23/64 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to one embodiment, a semiconductor module comprises a substrate, a first wiring, an electrode pad, a junction, an oscillator, and a detector. The first wiring is disposed on the substrate, and has a characteristic impedance Z. The electrode pad is connected to the first wiring. The junction is disposed on the electrode pad, and has an impedance Z. The oscillator is disposed in contact with the first wiring, and oscillates a pulse wave of a voltage toward the junction via the first wiring. The detector is disposed in contact with the first wiring, and detects an output wave of the pulse wave from the junction. The characteristic impedance Zand the impedance Zsatisfy a following relationship (1),


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