The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Sep. 24, 2012
Applicant:

Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;

Inventors:

Stephane Cros, Chambery, FR;

Nicole Alberola, Les Deserts, FR;

Jean-Paul Garandet, Le Bourget du Lac, FR;

Arnaud Morlier, Faucigny, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 18/14 (2006.01); C23C 18/12 (2006.01); H01L 21/02 (2006.01); H01L 51/52 (2006.01); H01L 31/048 (2014.01); H01L 31/0392 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
C23C 18/122 (2013.01); C23C 18/1204 (2013.01); C23C 18/1212 (2013.01); C23C 18/1225 (2013.01); C23C 18/14 (2013.01); H01L 21/02222 (2013.01); H01L 31/0392 (2013.01); H01L 31/03923 (2013.01); H01L 31/048 (2013.01); H01L 31/0481 (2013.01); H01L 51/5253 (2013.01); H01L 51/5256 (2013.01); B32B 2307/7244 (2013.01); H01L 51/107 (2013.01); Y02E 10/541 (2013.01); Y10T 428/2495 (2015.01); Y10T 428/24975 (2015.01);
Abstract

A multilayer structure including a substrate and a first stack of a layer of SiOand a layer of material of the SiONHtype positioned between the substrate and the layer of SiO, in which the layer of SiOand the layer of material of the SiONHtype have thicknesses (e, e) such that the thickness of the layer of SiOis less than or equal to 60 nm, the thickness of the layer of material of the SiONHtype (e) is more than twice the thickness (e) of the layer of SiO, and the sum of the thicknesses of the layer of SiOand of the layer of material of the SiONHtype is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.


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