The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Dec. 12, 2014
Tianjin University, Tianjin, CN;
Kaiming Nie, Tianjin, CN;
Suying Yao, Tianjin, CN;
Jiangtao Xu, Tianjin, CN;
Zaifeng Shi, Tianjin, CN;
Zhiyuan Gao, Tianjin, CN;
Jing Gao, Tianjin, CN;
Tianjin University, Tianjin, CN;
Abstract
The present invention relates to technical field of analog integrated circuit design. TDI function is better realized by CMOS image sensor and it improves scanning frequency of the CMOS-TDI image sensor and extends application range of TDI technique. To this end, the present invention proposes a technical solution of a current accumulative pixel structure for CMOS-TDI image sensor which comprises a photodiode, four MOS transistors M, M, M, M, four switches S, S, S, S, and two capacitors C, C; the connection relationship thereof is denoted below: the anode of the photodiode Dis connected to a ground wire, while the cathode thereof is connected to an input end; the drain and gate of the transistor Mare both connected with the input end, while the source thereof is connected with a power source VDD. The current invention mainly finds its application in analog integration circuit design.