The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Apr. 07, 2016
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018507 (2013.01);
Abstract
A high voltage level shifter includes a first high-voltage P-channel metal oxide semiconductor (HVPMOS) transistor, a second HVPMOS transistor, a discharge transistor having a first native high-voltage N-channel metal oxide semiconductor (HVNMOS) transistor and a first low-voltage N-channel metal oxide semiconductor (LVNMOS) transistor connected in series, and an avalanche transistor having a second HVNMOS transistor and a second LVNMOS transistor connected in series.
Kwon, Yi. (2017). High voltage level shifter in ultra low power supply memory application (U.S. Patent No. 9768778). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9768778
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