The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

May. 13, 2016
Applicant:

Fairchild Semiconductor Corporation, Sunnyvale, CA (US);

Inventors:

Lei Huang, Beijing, CN;

Jianing Zhou, Beijing, CN;

Zhaohong Li, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/24 (2006.01);
U.S. Cl.
CPC ...
H03K 5/2472 (2013.01); H03K 5/2481 (2013.01);
Abstract

This document discusses, among other things, a voltage comparator, an integrated circuit, or a voltage comparison method having increased precision. The hysteresis comparator or the integrated circuit can include first and second input transistors, each having a gate configured to receive a respective first or second input voltage. A bias power source can generate a bias current to a first node by applying a voltage through a first resistor. The first node can be connected to a source of the first input transistor through a second resistor and to a source of the second input transistor through a third resistor. The first, second, and third resistors can include the same type of resistor, with the second and third resistors having different resistance values.


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