The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jan. 27, 2016
Applicant:
SK Innovation Co., Ltd., Seoul, KR;
Inventors:
Jun-Hyung Kim, Daejeon, KR;
Young-Keun Lee, Seoul, KR;
Hong You, Daejeon, KR;
Sung-Jae An, Daejeon, KR;
Tae-Hee Kim, Seoul, KR;
Assignee:
SK INNOVATION CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); B82Y 10/00 (2011.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0566 (2013.01); B82Y 10/00 (2013.01); H01L 51/0558 (2013.01); H01L 51/0091 (2013.01); H01L 51/0094 (2013.01);
Abstract
A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and a metallic nanoparticle grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of at least one charges in the channel region.