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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9768359 B1

PDFFull Text
Date of Patent:
Sep. 19, 2017

Filed:

Jan. 15, 2015

Semiconductor device, method for manufacturing same, light-emitting diode, and method for manufacturing same

Applicant:

Intellectual Discovery Co., Ltd., Seoul, KR;

Inventors:

Tae Geun Kim, Seongnam-si, KR;

Kyung Heon Kim, Seoul, KR;

Assignee:

INTELLECTUAL DISCOVERY CO., LTD., Seoul, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Minh-Loan Tran

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 33/36 (2010.01); H01L 33/42 (2010.01); H01L 33/40 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/40 (2013.01); H01L 33/42 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A semiconductor device is disclosed, and the semiconductor device comprises: a semiconductor layer; and a transparent electrode which is formed from a resistance switching material and is formed on one side of the semiconductor layer, wherein the transparent electrode includes a channel on which an electron is capable of hopping and a conductive path formed by applying a voltage that is a threshold voltage or more, and the threshold voltage for forming the conductive path is lowered by the channel.

Find Patent Forward Citations

Kim, Tae. (2017). Semiconductor device, method for manufacturing same, light-emitting diode, and method for manufacturing same (U.S. Patent No. 9768359). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9768359

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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