The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Dec. 17, 2014
Applicant:

Forschungsverbund Berlin E.v., Berlin, DE;

Inventors:

Sven Einfeldt, Berlin, DE;

Luca Redaelli, Berlin, DE;

Michael Kneissl, Berlin, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01S 5/22 (2006.01); H01L 33/36 (2010.01); H01S 5/323 (2006.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/58 (2010.01); H01L 29/20 (2006.01); H01S 5/042 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/40 (2013.01); H01L 21/28575 (2013.01); H01L 29/452 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/58 (2013.01); H01S 5/22 (2013.01); H01S 5/32341 (2013.01); H01L 29/2003 (2013.01); H01L 33/0075 (2013.01); H01L 2933/0016 (2013.01); H01S 5/0425 (2013.01);
Abstract

A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact () on a surface () of a semiconductor () and has the steps of: applying a metal layer () of palladium onto the semiconductor surface (), applying a mask () onto the metal layer (), and structuring the palladium of the metal layer () using the mask (), wherein lateral deposits () of the metal are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits () and the structured metal layer (') after the structuring. Since the mask is conductive, it can remain embedded in the metal. The deposits and the mask form a part of the contact.


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