The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Sep. 02, 2014
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Assignee:
Epistar Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/08 (2010.01); H01L 33/06 (2010.01); H01L 33/02 (2010.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 33/025 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/305 (2013.01);
Abstract
An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer.