The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Nov. 25, 2014
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Debarshi Basu, Dallas, TX (US);
Henry Litzmann Edwards, Garland, TX (US);
Dimitar Trifonov Trifonov, Vail, AZ (US);
Josh Du, Tucson, AZ (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 31/11 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1105 (2013.01);
Abstract
This invention relates to field photodiodes based on PN junctions that suffer from dark current leakage. An NBL is added to prove a second PN junction with the anode. The second PN junction is reversed biased in order to remove dark current leakage. The present solution requires no additional masks or thin films steps relative to a conventional CMOS process flow.