The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Jun. 25, 2015
Applicants:

Robert Woehl, San Jose, CA (US);

David Aaron Randolph Barkhouse, Menlo Park, CA (US);

Paul Loscutoff, Castro Valley, CA (US);

Inventors:

Robert Woehl, San Jose, CA (US);

David Aaron Randolph Barkhouse, Menlo Park, CA (US);

Paul Loscutoff, Castro Valley, CA (US);

Assignees:

SunPower Corporation, San Jose, CA (US);

Total Marketing Services, Puteaux, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/06 (2012.01); H01L 21/32 (2006.01); H01L 31/18 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02013 (2013.01); H01L 31/18 (2013.01); H01L 21/32134 (2013.01); Y02E 10/50 (2013.01);
Abstract

Fabricating a semiconductor device can include forming a metal seed region over a substrate. The method can include forming a mask over a first portion of the metal seed region. The method can also include forming a metal region over the metal seed region and removing the mask. The method can include forming metal contact fingers on the semiconductor device, where the forming includes etching the first portion of the metal seed region with an etchant comprising an acid, an oxidizer and chloride ions.


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