Co-planar oxide semiconductor tft substrate structure and manufacture method thereof

Abstract

Provided is a co-planar oxide semiconductor TFT substrate structure, in which an active layer includes a main body and a plurality of short channels connected to the main body and are separated with a plurality of strip metal electrodes to make the active layer possess higher mobility and lower leak current. Also provided is a manufacture method of the co-planar oxide semiconductor TFT substrate structure, in which with the plurality of strip metal electrodes formed between the source and the drain, which are separately positioned, as deposing the oxide semiconductor layer, the plurality of short channels can be formed between the source and the drain. The method is simple and does not require additional mask or process to obtain the active layer structure different from prior art. The manufactured actively layer possesses higher mobility and lower leak current. Thus, the performance of the TFT element can be improved.