The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9768312 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 19, 2017

Filed:

Jul. 20, 2015
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Hongwei Tian, Beijing, CN;

Yanan Niu, Beijing, CN;

Zuqiang Wang, Beijing, CN;

Liang Sun, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/77 (2017.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/30 (2006.01); H01L 21/306 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78675 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02675 (2013.01); H01L 21/2251 (2013.01); H01L 21/3003 (2013.01); H01L 21/30604 (2013.01); H01L 21/77 (2013.01); H01L 27/1222 (2013.01); H01L 27/1285 (2013.01); H01L 29/1033 (2013.01); H01L 29/66757 (2013.01); H01L 29/786 (2013.01); H01L 29/78696 (2013.01);
Abstract

Embodiments of the present invention disclose a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display device. The manufacturing method of a thin film transistor includes a step of forming an active layer, and the step of forming an active layer includes: forming a first poly-silicon layer and a second poly-silicon layer on the first poly-silicon layer separately, and adding dopant ions into the second poly-silicon layer and an upper surface layer of the first poly-silicon layer. By using the manufacturing method of a thin film transistor, defect states and unstable factors of interface in the thin film transistor can be reduced, thereby improving stability of the LTPS thin film transistor and obtaining an array substrate and a display device having more stable performance.


Find Patent Forward Citations

Tian, Hongwei. (2017). Thin film transistor, manufacturing method thereof, array substrate, and display device (U.S. Patent No. 9768312). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9768312

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