The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

May. 14, 2015
Applicant:

Samsung Display Co., Ltd, Yongin, Gyeonggi-Do, KR;

Inventors:

Ki Wan Ahn, Seoul, KR;

Joo Sun Yoon, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 27/32 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78648 (2013.01); H01L 27/3262 (2013.01); H01L 29/1604 (2013.01); H01L 29/24 (2013.01); H01L 29/42392 (2013.01); H01L 29/6675 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78663 (2013.01); H01L 29/78672 (2013.01);
Abstract

A TFT, OLED display including the same, and manufacturing method thereof are disclosed. In one aspect, the TFT includes a first gate electrode formed over a substrate and a first insulating layer formed over the substrate and the first gate electrode. A semiconductor layer is formed over the first insulating layer, the semiconductor layer at least partially overlapping the first gate electrode. A second insulating layer is formed over the first insulating layer and the semiconductor layer, the first and second insulating layers having a pair of connection holes formed therethrough. A second gate electrode is electrically connected to the first gate electrode via the connection holes, the connection holes respectively exposing portions of the first gate electrode. Source and drain electrodes are formed over a third insulating layer and electrically connected to the semiconductor layer via the contact holes, the contact holes respectively exposing portions of the semiconductor layer.


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