The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Feb. 06, 2017
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Akitaka Soeno, Toyota, JP;

Takashi Kuno, Kariya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 23/5283 (2013.01); H01L 29/0623 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01);
Abstract

A switching device includes a semiconductor substrate having a first element range including first trenches for gates, and an ineffective range not including the first trenches. In an interlayer insulating film, a contact hole is provided within the first element range, and a wide contact hole is provided within the inactive range. The first metal layer contacts the semiconductor substrate within the contact hole and the wide contact hole. The insulating protective film covers an outer peripheral side portion of a bottom surface of a second recess which is provided in a surface of the first metal layer above the wide contact hole. A side surface of an opening provided in a portion of the insulating protective film that includes the first element range is disposed in the second recess. The second metal layer contacts the first metal layer and the side surface of the opening.


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