The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Sep. 19, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Xiaowen Lv, Guangdong, CN;
Chihyuan Tseng, Guangdong, CN;
Chihyu Su, Guangdong, CN;
Hejing Zhang, Guangdong, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
The present invention provides a TFT backplate structure and a manufacture method thereof. The TFT backplate structure comprises a switch TFT (T) and a drive TFT (T). The switch TFT (T) is constructed by a first source/a first drain (), a first gate (), and a first etching stopper layer (), a first oxide semiconductor layer (), a first gate isolation layer () sandwiched in between. The drive TFT (T) is constructed by a second source/a second drain (), a second gate (), and a second oxide semiconductor layer (), a first etching stopper layer (), a second gate isolation layer () sandwiched in between. The electrical properties of the switch TFT (T) and the drive TFT (T) are different. The switch TFT has smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has relatively larger subthreshold swing for controlling the current and the grey scale more precisely.