The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Sep. 19, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Xiaowen Lv, Guangdong, CN;
Chihyuan Tseng, Guangdong, CN;
Chihyu Su, Guangdong, CN;
Hejing Zhang, Guangdong, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
A TFT backplate structure and a manufacture method thereof are provided. The TFT backplate structure includes a switch TFT (T) and a drive TFT (T). The switch TFT (T) is constructed by a first source electrode/a first drain electrode (), a first gate electrode (), and a first etching stopper layer (), a first semiconductor layer (), a first gate isolation layer () sandwiched in between. The drive TFT (T) is constructed by a second source electrode/a second drain electrode (), a second gate electrode (), and a second etching stopper layer (), a second semiconductor layer (), a second gate isolation layer () sandwiched in between. The materials or the thicknesses of the first gate isolation layer () and the second gate isolation layer () are different. Accordingly, the electrical properties of the switch TFT (T) and the drive TFT (T) are different.