The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
May. 18, 2016
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Anthony Francis Quaglietta, Methuen, MA (US);
Michael Joseph McPartlin, North Andover, MA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01); H01L 27/02 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 29/66272 (2013.01); H01L 29/732 (2013.01); H01L 29/735 (2013.01); H01L 29/7322 (2013.01); H01L 27/0288 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/15184 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/181 (2013.01);
Abstract
Disclosed herein are systems and method for voltage clamping in semiconductor circuits using through-silicon via (TSV) positioning. A semiconductor die is disclosed that includes a silicon substrate, a bipolar transistor having collector, emitter, base and sub-collector regions disposed on the substrate, and a through-silicon via (TSV) positioned within 35 μm of the sub-collector region in order to clamp a peak voltage of the bipolar transistor at a voltage limit level.