The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Jul. 01, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung-Seob Lee, Suwon-si, KR;

Hyuk-Joon Kwon, Yongin-si, KR;

Bo-Tak Lim, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/58 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 29/49 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/573 (2013.01); H01L 23/5283 (2013.01); H01L 23/585 (2013.01); H01L 29/4916 (2013.01);
Abstract

A semiconductor device includes a semiconductor die, a semiconductor integrated circuit and a three-dimensional crack detection structure. The semiconductor die includes a central region and a peripheral region surrounding the central region. The semiconductor integrated circuit is formed in the central region. The three-dimensional crack detection structure is formed in a ring shape in the peripheral region to surround the central region. The three-dimensional crack detection structure is expanded in a vertical direction. Using the three-dimensional crack detection structure, the crack penetration of various types may be detected thoroughly.


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