The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

May. 01, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yunjung Choi, Seoul, KR;

Kivin Im, Seongnam-si, KR;

Dongbok Lee, Hwaseong-si, KR;

Inseak Hwang, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/115 (2017.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 27/115 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Semiconductor devices are provided including a plurality of nonlinear bit lines formed on a substrate including a plurality of active areas; a plurality of word lines that pass through the plurality of active areas; an integral spacer that covers two sidewalls of the plurality of nonlinear bit lines and defines a plurality of spaces that expose two adjacent ones of the plurality of active areas; two conductive patterns that respectively abut on the two adjacent active areas in one of the plurality of spaces that is selected; and a contact separating insulation layer that is formed between the two conductive patterns in the one selected space.


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