The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

May. 12, 2008
Applicants:

Christian Göbl, Nürnberg, DE;

Heiko Braml, Wiesenttal, DE;

Inventors:

Christian Göbl, Nürnberg, DE;

Heiko Braml, Wiesenttal, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/44 (2006.01); H01L 21/48 (2006.01); H01L 23/373 (2006.01); H01L 23/00 (2006.01); H05K 3/12 (2006.01); H05K 3/24 (2006.01); C04B 35/645 (2006.01); C04B 37/02 (2006.01); H01L 23/498 (2006.01); H01L 25/07 (2006.01); H05K 1/03 (2006.01); H05K 3/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4867 (2013.01); C04B 35/645 (2013.01); C04B 37/021 (2013.01); C04B 37/026 (2013.01); H01L 23/3735 (2013.01); H01L 24/48 (2013.01); H05K 3/1283 (2013.01); H05K 3/247 (2013.01); C04B 2237/124 (2013.01); C04B 2237/125 (2013.01); C04B 2237/343 (2013.01); C04B 2237/407 (2013.01); C04B 2237/408 (2013.01); C04B 2237/704 (2013.01); C04B 2237/706 (2013.01); C04B 2237/72 (2013.01); H01L 23/49811 (2013.01); H01L 25/072 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/75317 (2013.01); H01L 2224/85444 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H05K 1/0306 (2013.01); H05K 3/06 (2013.01); H05K 2201/0133 (2013.01); H05K 2201/035 (2013.01); H05K 2203/0191 (2013.01); H05K 2203/0278 (2013.01); H05K 2203/1131 (2013.01);
Abstract

A power semiconductor substrate comprising an insulating planar base, at least one conductor track and at least one contact area as part of the conductor track, wherein a layer of a metallic material is disposed on the contact area by means of pressure sintering. The associated method comprises the steps of: producing a power semiconductor substrate that includes a planar insulating base, conductor tracks and contact areas; arranging a pasty layer, composed of a metallic material and a solvent, on at least one contact area of the power semiconductor substrate; and applying pressure to the pasty layer.


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