The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Dec. 20, 2013
Applicant:

Avago Technologies General Ip (Singapore) Pte. Ltd., Singapore, SG;

Inventors:

Yifei Zhang, Edina, MN (US);

Myron Buer, Savage, MN (US);

Mark Winter, Seattle, WA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01);
Abstract

Passive write assist passively improves SRAM performance (e.g., write margin speed) while reducing manufacturing costs (e.g., die area, packaging) and operating costs (e.g., power consumption, cooling) associated with active write assist schemes. Passive write assist may be implemented in peripheral circuitry or embedded in an SRAM array or even in each array cell or bitcell. For example, one or more memory cells may be converted to provide passive write assist to a plurality of other memory cells. As another example, each memory cell may independently implement passive write assist using one or more high resistive contacts to couple to the array power supply, resulting in the array voltage level being changed by different amounts in different memory cells according to cell variations.


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