The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Mar. 10, 2016
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventor:
Akira Katayama, Seoul, KR;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 29/00 (2006.01); G11C 7/06 (2006.01); G11C 7/10 (2006.01); G11C 29/02 (2006.01); G11C 5/06 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/065 (2013.01); G11C 5/06 (2013.01); G11C 7/06 (2013.01); G11C 7/106 (2013.01); G11C 7/1069 (2013.01); G11C 29/022 (2013.01); G11C 29/026 (2013.01); G11C 29/74 (2013.01); G11C 11/1673 (2013.01); G11C 11/2273 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01);
Abstract
According to one embodiment, a memory device includes: a first storage area configured to store data; a first sense amplifier; a first data latch; a first selector configured to select either connection between the first data latch and the first sense amplifier or connection between the first data latch and another sense amplifier; and a second selector configured to select either connection between the first storage area and the first sense amplifier or connection between another storage area and the first sense amplifier.