The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Dec. 01, 2016
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Chao Dai, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/36 (2006.01); G11C 19/28 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3677 (2013.01); G09G 3/3696 (2013.01); G11C 19/28 (2013.01); G09G 2300/0408 (2013.01); G09G 2300/0417 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/06 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0214 (2013.01); G09G 2320/045 (2013.01);
Abstract

A scan driving circuit for oxide semiconductor thin film transistors includes a pull-down holding circuit part including a first pull-down holding module and a second pull-down holding module to help extend the lifetime of the circuit. The first pull-down holding module includes a first main inverter and a first auxiliary inverter introducing a constant low voltage level. The second pull-down holding module includes a second main inverter and a second auxiliary inverter introducing a constant low voltage level. The constant low voltage level is set lower than a second negative voltage level, which is in turn lower than a first negative voltage level. An influence of electrical property of the oxide semiconductor thin film transistors on the scan driving circuit, particularly poor functioning resulting from an electric leakage issue, can be prevented.


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