The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Nov. 15, 2016
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Chao Dai, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/36 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3677 (2013.01); G09G 3/3696 (2013.01); G09G 2300/0408 (2013.01); G09G 2310/0289 (2013.01); G09G 2310/06 (2013.01); G09G 2310/08 (2013.01); H01L 27/1225 (2013.01);
Abstract

Disclosed is a scan driving circuit for oxide semiconductor thin film transistors, in which a pull-down holding circuit part includes a main inverter and an auxiliary inverter. By introducing a constant low voltage level (DCL) and setting the constant low voltage level (DCL) less than the second negative voltage level (VSS), which is in turn less than the first negative voltage level (VSS), the influence of electrical property of the oxide semiconductor thin film transistors to the scan driving circuit, particularly the bad function due to the electric leakage issue, can be prevented to ensure that the pull-down holding circuit part can be normally pulled down in the functioning period and at higher voltage level in a non-functioning period to effectively maintain the first node (Q(N)) and the output end (G(N)) at low voltage level.


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