The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jun. 23, 2015
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Chao Dai, Shenzhen, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Abstract
The present invention provides a GOA circuit based on oxide semiconductor thin film transistor. By adding the fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T, T, T) respectively corresponding to the fourth, fifth, second nodes (S(N), K(N), P(N)) in the pull-down holding module (). The fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T, T, T) are controlled with the stage transfer signal of the GOA unit circuit of the former N−th stage or the scan driving signal of the GOA unit circuit of the former N−th stage to pull down the voltage levels of the fourth, fifth, second nodes (S(N), K(N), P(N)) under circumstance that the first node (Q(N)) is not completely boosted to rapidly deactivate the pull-down holding module () for ensuring the normal boost of the voltage level of the first node (Q(N)). The first node (Q(N)) is guaranteed to be high voltage level in the functioning period, and thus, the normal output of the GOA circuit is ensured.