The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

May. 15, 2012
Applicants:

Roel Daamen, Herkenbosch, NL;

Casper Juffermans, Valkenswaard, NL;

Josephus Franciscus Antonius Maria Guelen, Molenhoeck, NL;

Robertus Antonius Maria Wolters, Eindhoven, NL;

Inventors:

Roel Daamen, Herkenbosch, NL;

Casper Juffermans, Valkenswaard, NL;

Josephus Franciscus Antonius Maria Guelen, Molenhoeck, NL;

Robertus Antonius Maria Wolters, Eindhoven, NL;

Assignee:

ams International AG, Rappersil-Jona, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/20 (2006.01); H01L 41/22 (2013.01); G01N 27/22 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01N 27/223 (2013.01); G01R 31/2881 (2013.01); G01R 31/2884 (2013.01);
Abstract

Disclosed is an integrated circuit (IC) comprising a substrate () carrying a plurality of circuit elements; a metallization stack () interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising at least one sensor electrode portion () and a bond pad portion (), at least the at least one sensor electrode portion of said patterned upper metallization layer being covered by a moisture barrier film (); a passivation stack () covering the metallization stack, said passivation stack comprising a first trench () exposing the at least one sensor electrode portion and a second trench () exposing the bond pad portion; said first trench being filled with a sensor active material (). A method of manufacturing such an IC is also disclosed.


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