The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Jan. 28, 2014
Applicant:

Toyo Tanso Co., Ltd., Osaka, JP;

Inventor:

Masato Shinohara, Kanonji, JP;

Assignee:

TOYO TANSO CO., LTD., Osaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 41/89 (2006.01); C04B 35/52 (2006.01); C04B 41/50 (2006.01); C30B 29/36 (2006.01); C04B 41/52 (2006.01); C30B 35/00 (2006.01); H01L 21/687 (2006.01); C23C 16/458 (2006.01); H01L 21/683 (2006.01); C04B 41/00 (2006.01); C04B 41/45 (2006.01); C04B 41/53 (2006.01);
U.S. Cl.
CPC ...
C04B 41/89 (2013.01); C04B 35/522 (2013.01); C04B 41/009 (2013.01); C04B 41/5059 (2013.01); C04B 41/5061 (2013.01); C04B 41/52 (2013.01); C23C 16/4581 (2013.01); C30B 29/36 (2013.01); C30B 35/00 (2013.01); H01L 21/68757 (2013.01); C04B 41/00 (2013.01); C04B 41/4529 (2013.01); C04B 41/53 (2013.01); H01L 21/683 (2013.01); Y10T 428/24612 (2015.01); Y10T 428/265 (2015.01); Y10T 428/30 (2015.01);
Abstract

Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite () includes: a body () whose surface layer is at least partly formed of a first silicon carbide layer (); a tantalum carbide layer (); and a second silicon carbide layer (). The tantalum carbide layer () is disposed over the first silicon carbide layer (). The second silicon carbide layer () is interposed between the tantalum carbide layer () and the first silicon carbide layer (). The second silicon carbide layer () has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer () has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.


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