The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Dec. 10, 2013
Ningxia Orient Tantalum Industry Co., Ltd., Ningxia, CN;
National Engineering Research Center for Special Metal Materials of Tantalum and Niobium, Ningxia, CN;
Guoqi Yang, Shizuishan, CN;
Aiguo Zheng, Shizuishan, CN;
Yuewei Cheng, Shizuishan, CN;
Yuezhong Ma, Shizuishan, CN;
Abstract
A method for preparing a tantalum power of capacitor grade, comprising: solid tantalum nitride is added when potassium fluotantalate is reduced by sodium. The method increases the nitrogen content in the tantalum powder, and at the same time improves the electrical performance of the tantalum powder. The specific capacitance is increased, and the leakage current and loss is improved. The qualification rate of the anode and the capacitor product is also improved. The method is characterized in that the nitrogen in the tantalum nitride diffuses between the particles of the tantalum powder, with substantially no loss, and thus the nitrogen content is accurate and controllable.