The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Oct. 30, 2015
Faraday&future Inc., Gardena, CA (US);
Steven E. Schulz, Torrance, CA (US);
David Tang, Rancho Cucamonga, CA (US);
Silva Hiti, Redondo Beach, CA (US);
FARADAY&FUTURE INC., Gardena, CA (US);
Abstract
A system for interconnecting parallel insulated gate bipolar transistor (IGBT) modules is provided. A pair of switches selected from a plurality of the IGBT modules are assigned to a driver integrated circuit (IC). In the pair of switches, a master IGBT switch is selected, the other switch being a slave IGBT switch. A command signal from the driver IC is electrically coupled to both the master and slave IGBT switches. The master and slave IGBT switches both have protective circuits; however, the driver IC is electrically coupled to the protective circuits of the selected master IGBT switch only. The protective circuits include temperature and current sense circuits. The plurality of the IGBT modules may be formed by two hexpack power modules. The modules are configured such that only a single driver IC is needed for each pair of parallel IGBT switches, with equal current sharing of the paralleled modules.