The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Dec. 10, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Snu R&db Foundation, Seoul, KR;
Jin Han Kim, Suwon-si, KR;
Han Sol Seo, Seoul, KR;
Bo-Hyung Cho, Seoul, KR;
Sang-Woo Kang, Seoul, KR;
Paul Jang, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
SNU R&DB FOUNDATION, Seoul, KR;
Abstract
The present disclosure relates generally to a switch driving circuit and power factor correction circuit having the same, and more particularly, to a technology to provide a negative offset using Zener diodes to prevent malfunctions in driving a switch. The switch driving circuit to operate a switch implemented with a Field Effect Transistor (FET) includes a first Zener diode connected to a control input end of the switch; a capacitor connected in parallel with the first Zener diode; and second and third Zener diodes for providing a negative offset to fix a voltage applied between the gate and source of the switch to a negative value.