The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Aug. 21, 2014
Applicant:

Renesas Electronics Corporation, Kawasaki, JP;

Inventor:

Akihiro Nakahara, Kanagawa, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Kawasaki, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/00 (2006.01); H02H 11/00 (2006.01); H03K 17/06 (2006.01); H03K 17/0812 (2006.01);
U.S. Cl.
CPC ...
H02H 11/003 (2013.01); H03K 17/063 (2013.01); H03K 17/08122 (2013.01); H03K 2217/0018 (2013.01); H03K 2217/0036 (2013.01);
Abstract

A load driving method includes bringing an output transistor disposed between a first power supply line and an output terminal connected to a load into a conduction state by a protection transistor provided between a gate of the output transistor and a second power supply line when a polarity of a power supply coupled between the first power supply line and the second power supply lines is reversed, and forming a conductive path between the second power supply line and a back gate of the protection transistor via a transistor by a back gate control circuit when the polarity of the power supply is normal, the back gate control circuit including the transistor, a gate of the transistor being coupled to the first power supply line directly via a connection node located in a connecting line that couples the first power supply line and the output transistor, the transistor being coupled between the second power supply line and the back gate of the protection transistor.


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