The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
May. 31, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Youngjun Yun, Yongin-si, KR;
Joo Young Kim, Hwaseong-si, KR;
Byong Gwon Song, Seoul, KR;
Jaewon Jang, Daegu, KR;
Jiyoung Jung, Seoul, KR;
Ajeong Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.