The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Mar. 19, 2014
Applicant:

U.s. Army Research Laboratory Attn: Rdrl-loc-i, Washington, DC (US);

Inventors:

Glen R Fox, Colorado Springs, CO (US);

Ronald G. Polcawich, Derwood, MD (US);

Daniel M Potrepka, Silver Spring, MD (US);

Luz M Sanchez, Laurel, MD (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/08 (2006.01); H01L 41/319 (2013.01); H01L 41/187 (2006.01); H01L 41/316 (2013.01); C30B 29/32 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C23C 18/12 (2006.01);
U.S. Cl.
CPC ...
H01L 41/081 (2013.01); C30B 29/32 (2013.01); H01L 41/0815 (2013.01); H01L 41/1875 (2013.01); H01L 41/1876 (2013.01); H01L 41/316 (2013.01); H01L 41/319 (2013.01); C23C 18/1216 (2013.01); C23C 18/1291 (2013.01); C23C 18/1295 (2013.01); C30B 23/025 (2013.01); C30B 25/183 (2013.01);
Abstract

A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.


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