The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Apr. 17, 2014
Applicant:
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventors:
Tobias Meyer, Regensburg, DE;
Matthias Peter, Regensburg, DE;
Jürgen Off, Regensburg, DE;
Alexander Walter, Laaber, DE;
Tobias Gotschke, Nittendorf, DE;
Christian Leirer, Friedberg, DE;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01); H01L 33/02 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 33/0025 (2013.01); H01L 33/12 (2013.01); H01L 33/025 (2013.01); H01L 33/22 (2013.01);
Abstract
An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlGaN, wherein 0<x≦1, and the interlayer includes magnesium.