The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Sep. 22, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Sokratis Kalliakos, Cambridge, GB;

Joanna Krystyna Skiba-Szymanska, Cambridge, GB;

David Julian Peter Ellis, Cambridge, GB;

Andrew James Shields, Cambridge, GB;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/30 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0062 (2013.01); H01L 33/38 (2013.01); H01L 33/30 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0083 (2013.01);
Abstract

An optical device comprising: a photonic crystal structure, comprising: a layer of a first material, the layer comprising a quantum emitter; and a plurality of regions of a second material in the layer of the first material, the regions arranged in a regular lattice having at least one region missing from the lattice so that a defect is formed, wherein the quantum emitter is located in the defect part of the photonic crystal structure; wherein the second material has a different refractive index to the first material; and an electrode which is electrically contacted to only the defect part of the photonic crystal structure.


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