The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Jul. 12, 2016
Hestia Power Inc., Hsinchu, TW;
Fu-Jen Hsu, Hsinchu, TW;
Chien-Chung Hung, Hsinchu, TW;
Yao-Feng Huang, Hsinchu, TW;
Cheng-Tyng Yen, Hsinchu, TW;
Chwan-Ying Lee, Hsinchu, TW;
HESTIA POWER INC., Hsinchu, TW;
Abstract
A wide bandgap semiconductor device with an adjustable voltage level includes a wide bandgap semiconductor power unit and a level adjusting unit. The wide bandgap semiconductor power unit includes a source terminal, to which the level adjusting unit is electrically connected. The level adjusting unit provides a level shift voltage via the source terminal to adjust a driving voltage level of the wide bandgap semiconductor power unit. By adjusting the driving voltage level of the wide bandgap semiconductor power unit using the level adjusting unit, the wide bandgap semiconductor device may serve as a high-voltage enhancement-mode transistor to achieve reduced costs and an increased switching speed.