The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Mar. 01, 2016
Applicant:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Inventors:
Scott Nelson, River Falls, WI (US);
Srinivasan Kannan, Maplewood, MN (US);
Assignee:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 31/109 (2006.01); H01L 31/0304 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 31/03044 (2013.01); H01L 31/109 (2013.01); H01L 33/0025 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01S 5/32341 (2013.01);
Abstract
There are disclosed herein various implementations of a semiconductor component including one or more aluminum silicon nitride layers. The semiconductor component includes a substrate, a group III-V intermediate body situated over the substrate, a group III-V buffer layer situated over the group III-V intermediate body, and a group III-V device fabricated over the group III-V buffer layer. The group III-V intermediate body includes the one or more aluminum silicon nitride layers.