The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Dec. 18, 2013
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/812 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/872 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/41758 (2013.01); H01L 29/66212 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/872 (2013.01); H01L 21/30621 (2013.01); H01L 29/0692 (2013.01);
Abstract
A semiconductor device having: a substrate; a nitride semiconductor layer including a first semiconductor layer made of GaN or InGaN (0<x≦1) and formed on the substrate and a second semiconductor layer containing Al and formed on the first semiconductor layer; and a protective film formed on the set of nitride semiconductor layers. The nitride semiconductor layer has an active section and an inactive section surrounding the active section, and a portion of the second semiconductor layer has been removed from the inactive section.