The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
May. 06, 2016
Rohm Co., Ltd., Kyoto, JP;
Daisuke Ichikawa, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes a first conductivity type semiconductor substrate, a second conductivity type semiconductor layer which is formed on the semiconductor substrate so as to be in contact with the semiconductor substrate, a first conductivity type body region which is formed in a front surface portion of the semiconductor layer, a second conductivity type source region which is formed in a front surface portion of the body region, a second conductivity type drain region which is formed apart from the body region, a gate insulating film which is formed in a front surface of the semiconductor layer so as to be in contact with the body region, a thick insulating film which is formed integrally with the gate insulating film so as to cover the semiconductor layer between the gate insulating film and the drain region and a gate electrode which is opposite to the body region via the gate insulating film. The body region includes a first portion in which a boundary with the semiconductor layer is in contact with the gate insulating film and a second portion in which a boundary with the semiconductor layer is in contact with the thick insulating film.