The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Jul. 27, 2016
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Denso Corporation, Kariya-shi, Aichi-ken, JP;
Seiji Momota, Kawasaki, JP;
Hitoshi Abe, Kawasaki, JP;
Kenji Kouno, Kariya, JP;
Hiromitsu Tanabe, Kariya, JP;
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Denso Corporation, Kariya-shi, JP;
Abstract
A semiconductor device that includes a plurality of trench gate structures each having a gate electrode extending in a depth direction of an element, the plurality of trench gate structures including first trench gate structures respectively contributing to control of the element and second trench gate structures respectively not contributing to the control of the element, the semiconductor device including an electrode portion having a potential other than a gate potential, and an electrode pad that is disposed on a front face of a semiconductor substrate, wherein the electrode pad is used as a terminal to apply a predetermined voltage to gate insulator films, in screening that is executed by applying the predetermined voltage to the gate insulator films respectively in contact with the gate electrode connected to the electrode pad and that is executed before the electrode pad is short-circuited to the electrode portion.