The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Jan. 27, 2015
Applicant:

The University of North Texas, Denton, TX (US);

Inventor:

Jeffry Kelber, Denton, TX (US);

Assignee:

UNIVERSITY OF NORTH TEXAS, Denton, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 23/532 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 43/14 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0669 (2013.01); H01L 23/532 (2013.01); H01L 29/1606 (2013.01); H01L 29/4908 (2013.01); H01L 29/66742 (2013.01); H01L 43/14 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Manufacturable spin and spin-polaron interconnects are disclosed that do not exhibit the same increase in resistivity shown by Cu interconnects associated with decreasing linewidth. These interconnects rely on the transmission of spin as opposed to charge. Two types of graphene based interconnect approaches are explored, one involving the injection and diffusive transport of discrete spin-polarized carriers, and the other involving coherent spin polarization of graphene charge carriers due to exchange interactions with localized substrate spins. Such devices are manufacturable as well as scalable (methods for their fabrication exist, and the interconnects are based on direct growth, rather than physical transfer or metal catalyst formation). Performance at or above 300 K, as opposed to cryogenic temperatures, is the performance criteria.


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