The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Feb. 25, 2015
Applicants:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Isorg, Grenoble, FR;

Inventors:

Mohammed Benwadih, Champigny sur Marne, FR;

Jean-Marie Verilhac, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/30 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3274 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01); H01L 27/307 (2013.01);
Abstract

An electronic device which includes at least one optoelectronic component including a first active layer, a first electrode, and a second interface layer between the first layer and the first electrode; and at least one first field effect transistor including a first semiconductor portion, a first gate, and at least one third layer, between the first gate and the first semiconductor portion. The third layer is made of the same material as the second layer. The electronic device includes a second electrode and a fourth interface layer between the first layer and the second electrode and includes a second field effect transistor that includes a second semiconductor portion, a second gate, and at least one fifth layer between the second gate and the second semiconductor portion. The fifth layer is made of the same material as the fourth layer.


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